The Japanese manufacturer said its latest power semiconductor module is based on a compact insulated-gate bipolar transistor (IGBT) and is designed for large capacity industrial power converters voltage of 2,300 V.
Japan’s Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode (FWD) function.
The new HPnC X series 1700 V, 3,300 V Class module, which will be available in June, is designed for large power converters between DC 1700 V and 3.3 kV.
Power converters are used in solar PV inverters and power conditioning systems.
The modules measure 100 mm x 144 mm x 40 mm and have a rated current that ranges from 1,200 A to 1,800 A, depending on the model. Voltage options for this line of IGBT products are 1,700 V or 2,300 V.
The company notes that it is using the latest…
